Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion
- Autores: Tarasov A.1, Ishchenko D.1, Akimov A.1, Akhundov I.1, Golyashov V.1, Klimov A.1, Pashchin N.1, Suprun S.1, Fedosenko E.1, Sherstyakova V.1, Tereshchenko O.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Edição: Volume 64, Nº 11 (2019)
- Páginas: 1704-1708
- Seção: Article
- URL: https://journals.rcsi.science/1063-7842/article/view/204700
- DOI: https://doi.org/10.1134/S1063784219110264
- ID: 204700
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Resumo
High-resistance Pb1 –xSnxTe〈In〉 layers grown by molecular beam epitaxy on BaF2(111) substrates with compositions close to band inversion have been investigated. The I–V characteristics and relaxation dependences of the photocurrent of the structures in dependence on the chemical surface treatment and subsequent exposure of the samples in air have been examined. It has been observed that the characteristics significantly transform depending on the physicochemical surface state. It has been found that the chemical surface treatment in the hydrochloric acid solution in isopropyl alcohol leads to an increase in the current by up to four orders of magnitude with the subsequent recovery of the I–V characteristics upon exposure of the samples in air for several days.
Sobre autores
A. Tarasov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
D. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
A. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
I. Akhundov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
V. Golyashov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
A. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
N. Pashchin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
S. Suprun
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
E. Fedosenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
V. Sherstyakova
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090
O. Tereshchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Rússia, Novosibirsk, 660090