Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion
- Authors: Tarasov A.S.1, Ishchenko D.V.1, Akimov A.N.1, Akhundov I.O.1, Golyashov V.A.1, Klimov A.E.1, Pashchin N.S.1, Suprun S.P.1, Fedosenko E.V.1, Sherstyakova V.N.1, Tereshchenko O.E.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 64, No 11 (2019)
- Pages: 1704-1708
- Section: Article
- URL: https://journals.rcsi.science/1063-7842/article/view/204700
- DOI: https://doi.org/10.1134/S1063784219110264
- ID: 204700
Cite item
Abstract
High-resistance Pb1 –xSnxTe〈In〉 layers grown by molecular beam epitaxy on BaF2(111) substrates with compositions close to band inversion have been investigated. The I–V characteristics and relaxation dependences of the photocurrent of the structures in dependence on the chemical surface treatment and subsequent exposure of the samples in air have been examined. It has been observed that the characteristics significantly transform depending on the physicochemical surface state. It has been found that the chemical surface treatment in the hydrochloric acid solution in isopropyl alcohol leads to an increase in the current by up to four orders of magnitude with the subsequent recovery of the I–V characteristics upon exposure of the samples in air for several days.
About the authors
A. S. Tarasov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
D. V. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
A. N. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
I. O. Akhundov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
V. A. Golyashov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
A. E. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
N. S. Pashchin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
S. P. Suprun
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
E. V. Fedosenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
V. N. Sherstyakova
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090
O. E. Tereshchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: miracle4348@gmail.com
Russian Federation, Novosibirsk, 660090