InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths
- Авторы: Il’inskaya N.1, Karandashev S.1, Lavrov A.1,2, Matveev B.1, Remennyi M.1, Stus’ N.1,2, Usikova A.1
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Учреждения:
- Ioffe Institute
- OOO IoffeLED
- Выпуск: Том 63, № 2 (2018)
- Страницы: 226-229
- Раздел: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/200727
- DOI: https://doi.org/10.1134/S1063784218020172
- ID: 200727
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Аннотация
Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.
Об авторах
N. Il’inskaya
Ioffe Institute
Email: ioffeled@mail.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
B. Matveev
Ioffe Institute
Автор, ответственный за переписку.
Email: ioffeled@mail.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
M. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. Stus’
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
Россия, Politekhnicheskaya ul. 26, St. Petersburg, 194021