Мақаланы E-mail арқылы жіберу InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths
- Авторлар: Il’inskaya N.1, Karandashev S.1, Lavrov A.1,2, Matveev B.1, Remennyi M.1, Stus’ N.1,2, Usikova A.1
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Мекемелер:
- Ioffe Institute
- OOO IoffeLED
- Шығарылым: Том 63, № 2 (2018)
- Беттер: 226-229
- Бөлім: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/200727
- DOI: https://doi.org/10.1134/S1063784218020172
- ID: 200727
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.
Авторлар туралы
N. Il’inskaya
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
S. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Lavrov
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
B. Matveev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: ioffeled@mail.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
M. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. Stus’
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
