Email this article InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths
- Authors: Il’inskaya N.D.1, Karandashev S.A.1, Lavrov A.A.1,2, Matveev B.A.1, Remennyi M.A.1, Stus’ N.M.1,2, Usikova A.A.1
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Affiliations:
- Ioffe Institute
- OOO IoffeLED
- Issue: Vol 63, No 2 (2018)
- Pages: 226-229
- Section: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/200727
- DOI: https://doi.org/10.1134/S1063784218020172
- ID: 200727
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Abstract
Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.
About the authors
N. D. Il’inskaya
Ioffe Institute
Email: ioffeled@mail.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
S. A. Karandashev
Ioffe Institute
Email: ioffeled@mail.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. A. Lavrov
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
B. A. Matveev
Ioffe Institute
Author for correspondence.
Email: ioffeled@mail.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
M. A. Remennyi
Ioffe Institute
Email: ioffeled@mail.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. M. Stus’
Ioffe Institute; OOO IoffeLED
Email: ioffeled@mail.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. A. Usikova
Ioffe Institute
Email: ioffeled@mail.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
