Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

S. Zh. Nimatov; B. E. Umirzakov; F. Ya. Khudaikulov; D. S. Rumi

doi:10.1134/S1063784219100153

Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

Авторы: Nimatov S.Z.¹, Umirzakov B.E.¹, Khudaikulov F.Y.¹, Rumi D.S.²
Учреждения:
1. Karimov State Technical University
2. Scientific and Technical Enterprise Proton
Выпуск: Том 64, № 10 (2019)
Страницы: 1527-1529
Раздел: Electrophysics
URL: https://journals.rcsi.science/1063-7842/article/view/204296
DOI: https://doi.org/10.1134/S1063784219100153
ID: 204296

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Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function φ of Si(111) variously depends on dose at different energies of types of ions.