Email this article Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing
- Authors: Nimatov S.Z.1, Umirzakov B.E.1, Khudaikulov F.Y.1, Rumi D.S.2
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Affiliations:
- Karimov State Technical University
- Scientific and Technical Enterprise Proton
- Issue: Vol 64, No 10 (2019)
- Pages: 1527-1529
- Section: Electrophysics
- URL: https://journals.rcsi.science/1063-7842/article/view/204296
- DOI: https://doi.org/10.1134/S1063784219100153
- ID: 204296
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Abstract
Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function φ of Si(111) variously depends on dose at different energies of types of ions.
About the authors
S. Zh. Nimatov
Karimov State Technical University
Author for correspondence.
Email: Nimatov@mail.ru
Uzbekistan, Tashkent, 100095
B. E. Umirzakov
Karimov State Technical University
Email: Nimatov@mail.ru
Uzbekistan, Tashkent, 100095
F. Ya. Khudaikulov
Karimov State Technical University
Email: Nimatov@mail.ru
Uzbekistan, Tashkent, 100095
D. S. Rumi
Scientific and Technical Enterprise Proton
Email: Nimatov@mail.ru
Uzbekistan, Tashkent, 100007
