Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing
- 作者: Nimatov S.1, Umirzakov B.1, Khudaikulov F.1, Rumi D.2
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隶属关系:
- Karimov State Technical University
- Scientific and Technical Enterprise Proton
- 期: 卷 64, 编号 10 (2019)
- 页面: 1527-1529
- 栏目: Electrophysics
- URL: https://journals.rcsi.science/1063-7842/article/view/204296
- DOI: https://doi.org/10.1134/S1063784219100153
- ID: 204296
如何引用文章
详细
Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function φ of Si(111) variously depends on dose at different energies of types of ions.
作者简介
S. Nimatov
Karimov State Technical University
编辑信件的主要联系方式.
Email: Nimatov@mail.ru
乌兹别克斯坦, Tashkent, 100095
B. Umirzakov
Karimov State Technical University
Email: Nimatov@mail.ru
乌兹别克斯坦, Tashkent, 100095
F. Khudaikulov
Karimov State Technical University
Email: Nimatov@mail.ru
乌兹别克斯坦, Tashkent, 100095
D. Rumi
Scientific and Technical Enterprise Proton
Email: Nimatov@mail.ru
乌兹别克斯坦, Tashkent, 100007