Мақаланы E-mail арқылы жіберу Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing
- Авторлар: Nimatov S.1, Umirzakov B.1, Khudaikulov F.1, Rumi D.2
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Мекемелер:
- Karimov State Technical University
- Scientific and Technical Enterprise Proton
- Шығарылым: Том 64, № 10 (2019)
- Беттер: 1527-1529
- Бөлім: Electrophysics
- URL: https://journals.rcsi.science/1063-7842/article/view/204296
- DOI: https://doi.org/10.1134/S1063784219100153
- ID: 204296
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Аннотация
Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function φ of Si(111) variously depends on dose at different energies of types of ions.
Авторлар туралы
S. Nimatov
Karimov State Technical University
Хат алмасуға жауапты Автор.
Email: Nimatov@mail.ru
Өзбекстан, Tashkent, 100095
B. Umirzakov
Karimov State Technical University
Email: Nimatov@mail.ru
Өзбекстан, Tashkent, 100095
F. Khudaikulov
Karimov State Technical University
Email: Nimatov@mail.ru
Өзбекстан, Tashkent, 100095
D. Rumi
Scientific and Technical Enterprise Proton
Email: Nimatov@mail.ru
Өзбекстан, Tashkent, 100007
