Email this article Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers
- Authors: Boldyrevskii P.B.1, Filatov D.O.1, Kazantseva I.A.1, Revin M.V.1, Smotrin D.S.1, Yunin P.A.2
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Affiliations:
- Lobachevsky State University
- Institute for Physics of Microstructures
- Issue: Vol 63, No 2 (2018)
- Pages: 211-215
- Section: Physical Science of Materials
- URL: https://journals.rcsi.science/1063-7842/article/view/200703
- DOI: https://doi.org/10.1134/S1063784218020068
- ID: 200703
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Abstract
The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.
About the authors
P. B. Boldyrevskii
Lobachevsky State University
Author for correspondence.
Email: bpavel2@rambler.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
D. O. Filatov
Lobachevsky State University
Email: bpavel2@rambler.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
I. A. Kazantseva
Lobachevsky State University
Email: bpavel2@rambler.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
M. V. Revin
Lobachevsky State University
Email: bpavel2@rambler.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
D. S. Smotrin
Lobachevsky State University
Email: bpavel2@rambler.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950
P. A. Yunin
Institute for Physics of Microstructures
Email: bpavel2@rambler.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
