Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers
- Авторлар: Boldyrevskii P.1, Filatov D.1, Kazantseva I.1, Revin M.1, Smotrin D.1, Yunin P.2
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Мекемелер:
- Lobachevsky State University
- Institute for Physics of Microstructures
- Шығарылым: Том 63, № 2 (2018)
- Беттер: 211-215
- Бөлім: Physical Science of Materials
- URL: https://journals.rcsi.science/1063-7842/article/view/200703
- DOI: https://doi.org/10.1134/S1063784218020068
- ID: 200703
Дәйексөз келтіру
Аннотация
The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.
Авторлар туралы
P. Boldyrevskii
Lobachevsky State University
Хат алмасуға жауапты Автор.
Email: bpavel2@rambler.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
D. Filatov
Lobachevsky State University
Email: bpavel2@rambler.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
I. Kazantseva
Lobachevsky State University
Email: bpavel2@rambler.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
M. Revin
Lobachevsky State University
Email: bpavel2@rambler.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
D. Smotrin
Lobachevsky State University
Email: bpavel2@rambler.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
P. Yunin
Institute for Physics of Microstructures
Email: bpavel2@rambler.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950