Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers

P. B. Boldyrevskii; D. O. Filatov; I. A. Kazantseva; M. V. Revin; D. S. Smotrin; P. A. Yunin

doi:10.1134/S1063784218020068

Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers

Авторы: Boldyrevskii P.¹, Filatov D.¹, Kazantseva I.¹, Revin M.¹, Smotrin D.¹, Yunin P.²
Учреждения:
1. Lobachevsky State University
2. Institute for Physics of Microstructures
Выпуск: Том 63, № 2 (2018)
Страницы: 211-215
Раздел: Physical Science of Materials
URL: https://journals.rcsi.science/1063-7842/article/view/200703
DOI: https://doi.org/10.1134/S1063784218020068
ID: 200703

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Аннотация

The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.