Email this article Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment
- Authors: Yusupjanova M.B.1, Tashmukhamedova D.A.1, Umirzakov B.E.1
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Affiliations:
- Tashkent State Technical University
- Issue: Vol 61, No 4 (2016)
- Pages: 628-630
- Section: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/197114
- DOI: https://doi.org/10.1134/S1063784216040253
- ID: 197114
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Abstract
The influence of Ar+ bombardment on the composition and the structure of the SiO2/Si surface is studied. A thin Si film is found to form on the SiO2 surface subjected to high-dose ion bombardment.
About the authors
M. B. Yusupjanova
Tashkent State Technical University
Author for correspondence.
Email: ftmet@rambler.ru
Uzbekistan, ul. Universitetskaya 2, Tashkent, 100095
D. A. Tashmukhamedova
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbekistan, ul. Universitetskaya 2, Tashkent, 100095
B. E. Umirzakov
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbekistan, ul. Universitetskaya 2, Tashkent, 100095
