Enviar artigo por via de e-mail Composition, morphology, and electronic structure of the nanophases created on the SiO2 Surface by Ar+ ion bombardment
- Autores: Yusupjanova M.1, Tashmukhamedova D.1, Umirzakov B.1
-
Afiliações:
- Tashkent State Technical University
- Edição: Volume 61, Nº 4 (2016)
- Páginas: 628-630
- Seção: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/197114
- DOI: https://doi.org/10.1134/S1063784216040253
- ID: 197114
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The influence of Ar+ bombardment on the composition and the structure of the SiO2/Si surface is studied. A thin Si film is found to form on the SiO2 surface subjected to high-dose ion bombardment.
Sobre autores
M. Yusupjanova
Tashkent State Technical University
Autor responsável pela correspondência
Email: ftmet@rambler.ru
Uzbequistão, ul. Universitetskaya 2, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbequistão, ul. Universitetskaya 2, Tashkent, 100095
B. Umirzakov
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbequistão, ul. Universitetskaya 2, Tashkent, 100095
