Отправить статью по E-mail X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well
- Авторы: Blagov A.E.1,2, Galiev G.B.1,3, Imamov R.M.1, Klimov E.A.3, Kondratev O.A.1,2, Pisarevskii Y.V.1,2, Prosekov P.A.1,2, Pushkarev S.S.1,3, Seregin A.Y.1,2, Koval’chuk M.V.1,2
-
Учреждения:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
- National Research Centre “Kurchatov Institute”
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Выпуск: Том 62, № 3 (2017)
- Страницы: 355-363
- Раздел: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190947
- DOI: https://doi.org/10.1134/S1063774517030026
- ID: 190947
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.
Об авторах
A. Blagov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 123182
G. Galiev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 117105
R. Imamov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333
E. Klimov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 117105
O. Kondratev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Автор, ответственный за переписку.
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 123182
Yu. Pisarevskii
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 123182
P. Prosekov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 123182
S. Pushkarev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 117105
A. Seregin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 123182
M. Koval’chuk
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Россия, Moscow, 119333; Moscow, 123182
Дополнительные файлы
