电邮这篇文章 X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well
- 作者: Blagov A.E.1,2, Galiev G.B.1,3, Imamov R.M.1, Klimov E.A.3, Kondratev O.A.1,2, Pisarevskii Y.V.1,2, Prosekov P.A.1,2, Pushkarev S.S.1,3, Seregin A.Y.1,2, Koval’chuk M.V.1,2
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隶属关系:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
- National Research Centre “Kurchatov Institute”
- Institute of Ultrahigh Frequency Semiconductor Electronics
- 期: 卷 62, 编号 3 (2017)
- 页面: 355-363
- 栏目: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190947
- DOI: https://doi.org/10.1134/S1063774517030026
- ID: 190947
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详细
In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.
作者简介
A. Blagov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 123182
G. Galiev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 117105
R. Imamov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333
E. Klimov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 117105
O. Kondratev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
编辑信件的主要联系方式.
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 123182
Yu. Pisarevskii
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 123182
P. Prosekov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 123182
S. Pushkarev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 117105
A. Seregin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 123182
M. Koval’chuk
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
俄罗斯联邦, Moscow, 119333; Moscow, 123182
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