Мақаланы E-mail арқылы жіберу X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well
- Авторлар: Blagov A.1,2, Galiev G.1,3, Imamov R.1, Klimov E.3, Kondratev O.1,2, Pisarevskii Y.1,2, Prosekov P.1,2, Pushkarev S.1,3, Seregin A.1,2, Koval’chuk M.1,2
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Мекемелер:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
- National Research Centre “Kurchatov Institute”
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Шығарылым: Том 62, № 3 (2017)
- Беттер: 355-363
- Бөлім: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190947
- DOI: https://doi.org/10.1134/S1063774517030026
- ID: 190947
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.
Авторлар туралы
A. Blagov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 123182
G. Galiev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 117105
R. Imamov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333
E. Klimov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 117105
O. Kondratev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Хат алмасуға жауапты Автор.
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 123182
Yu. Pisarevskii
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 123182
P. Prosekov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 123182
S. Pushkarev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 117105
A. Seregin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 123182
M. Koval’chuk
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Ресей, Moscow, 119333; Moscow, 123182
