Email this article X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well
- Authors: Blagov A.E.1,2, Galiev G.B.1,3, Imamov R.M.1, Klimov E.A.3, Kondratev O.A.1,2, Pisarevskii Y.V.1,2, Prosekov P.A.1,2, Pushkarev S.S.1,3, Seregin A.Y.1,2, Koval’chuk M.V.1,2
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Affiliations:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
- National Research Centre “Kurchatov Institute”
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Issue: Vol 62, No 3 (2017)
- Pages: 355-363
- Section: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190947
- DOI: https://doi.org/10.1134/S1063774517030026
- ID: 190947
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Abstract
In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.
About the authors
A. E. Blagov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 123182
G. B. Galiev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 117105
R. M. Imamov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333
E. A. Klimov
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 117105
O. A. Kondratev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Author for correspondence.
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 123182
Yu. V. Pisarevskii
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 123182
P. A. Prosekov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 123182
S. S. Pushkarev
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; Institute of Ultrahigh Frequency Semiconductor Electronics
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 117105
A. Yu. Seregin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 123182
M. V. Koval’chuk
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”; National Research Centre “Kurchatov Institute”
Email: oa.kondratev@physics.msu.ru
Russian Federation, Moscow, 119333; Moscow, 123182
