Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method
- Авторлар: Parfenteva I.1, Pugachev B.1, Pavlov V.1, Kozlova Y.2, Knyazev C.1, Yugova T.1
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Мекемелер:
- State Institute of Rare Metals “Giredmet”
- Institute for Nuclear Research
- Шығарылым: Том 62, № 2 (2017)
- Беттер: 275-278
- Бөлім: Real Structure of Crystals
- URL: https://journals.rcsi.science/1063-7745/article/view/190828
- DOI: https://doi.org/10.1134/S1063774517020201
- ID: 190828
Дәйексөз келтіру
Аннотация
The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3° in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 × 104 cm–1 in low-angle boundaries to 6 × 104 cm–1 in subboundaries.
Авторлар туралы
I. Parfenteva
State Institute of Rare Metals “Giredmet”
Хат алмасуға жауапты Автор.
Email: P_Yugov@mail.ru
Ресей, Moscow, 119017
B. Pugachev
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Ресей, Moscow, 119017
V. Pavlov
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Ресей, Moscow, 119017
Yu. Kozlova
Institute for Nuclear Research
Email: P_Yugov@mail.ru
Ресей, Moscow, 117312
C. Knyazev
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Ресей, Moscow, 119017
T. Yugova
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Ресей, Moscow, 119017