Email this article Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method
- Authors: Parfenteva I.B.1, Pugachev B.V.1, Pavlov V.F.1, Kozlova Y.P.2, Knyazev C.N.1, Yugova T.G.1
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Affiliations:
- State Institute of Rare Metals “Giredmet”
- Institute for Nuclear Research
- Issue: Vol 62, No 2 (2017)
- Pages: 275-278
- Section: Real Structure of Crystals
- URL: https://journals.rcsi.science/1063-7745/article/view/190828
- DOI: https://doi.org/10.1134/S1063774517020201
- ID: 190828
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Abstract
The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3° in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 × 104 cm–1 in low-angle boundaries to 6 × 104 cm–1 in subboundaries.
About the authors
I. B. Parfenteva
State Institute of Rare Metals “Giredmet”
Author for correspondence.
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
B. V. Pugachev
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
V. F. Pavlov
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
Yu. P. Kozlova
Institute for Nuclear Research
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 117312
C. N. Knyazev
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
T. G. Yugova
State Institute of Rare Metals “Giredmet”
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
