Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method

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The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3° in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 × 10⁴ cm^–1 in low-angle boundaries to 6 × 10⁴ cm^–1 in subboundaries.