Low-Temperature Crystallization of Germanium in the Thin-Film Ge/Al System


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Abstract

The crystallization of thin germanium films during vacuum thermal deposition on an aluminum surface has been investigated. Significant changes in the morphology and crystal structure of films in dependence of the formation temperature are demonstrated using atomic force microscopy and X-ray diffraction. The temperature ranges for growth of amorphous and polycrystalline germanium films are determined. It is shown that the decrease in the germanium crystallization temperature to 300°С is caused by the size effect and is explained within the metal-induced crystallization model.

About the authors

A. N. Beltiukov

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

Author for correspondence.
Email: beltukov.a.n@gmail.com
Russian Federation, Izhevsk, 426067

V. A. Volkov

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

Email: beltukov.a.n@gmail.com
Russian Federation, Izhevsk, 426067

A. I. Chukavin

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

Email: beltukov.a.n@gmail.com
Russian Federation, Izhevsk, 426067

R. G. Valeev

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

Email: beltukov.a.n@gmail.com
Russian Federation, Izhevsk, 426067

A. E. Muslimov

Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Russian Academy of Sciences

Email: beltukov.a.n@gmail.com
Russian Federation, Moscow, 119333

V. M. Kanevsky

Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Russian Academy of Sciences

Email: beltukov.a.n@gmail.com
Russian Federation, Moscow, 119333


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