Low-Temperature Crystallization of Germanium in the Thin-Film Ge/Al System


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详细

The crystallization of thin germanium films during vacuum thermal deposition on an aluminum surface has been investigated. Significant changes in the morphology and crystal structure of films in dependence of the formation temperature are demonstrated using atomic force microscopy and X-ray diffraction. The temperature ranges for growth of amorphous and polycrystalline germanium films are determined. It is shown that the decrease in the germanium crystallization temperature to 300°С is caused by the size effect and is explained within the metal-induced crystallization model.

作者简介

A. Beltiukov

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

编辑信件的主要联系方式.
Email: beltukov.a.n@gmail.com
俄罗斯联邦, Izhevsk, 426067

V. Volkov

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

Email: beltukov.a.n@gmail.com
俄罗斯联邦, Izhevsk, 426067

A. Chukavin

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

Email: beltukov.a.n@gmail.com
俄罗斯联邦, Izhevsk, 426067

R. Valeev

Udmurt Federal Research Center, Russian Academy of Sciences, Ural Branch

Email: beltukov.a.n@gmail.com
俄罗斯联邦, Izhevsk, 426067

A. Muslimov

Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Russian Academy of Sciences

Email: beltukov.a.n@gmail.com
俄罗斯联邦, Moscow, 119333

V. Kanevsky

Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Russian Academy of Sciences

Email: beltukov.a.n@gmail.com
俄罗斯联邦, Moscow, 119333


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