Epitaxy of CdTe on sapphire substrates with titanium buffer layers
- 作者: Muslimov A.E.1, Butashin A.V.1, Kanevsky V.M.1, Babaev V.A.2, Alikhanov N.M.2
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隶属关系:
- Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
- Dagestan State University
- 期: 卷 62, 编号 3 (2017)
- 页面: 455-459
- 栏目: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/191043
- DOI: https://doi.org/10.1134/S1063774517030154
- ID: 191043
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详细
The formation of a developed electrical relief on the sapphire substrate surface is investigated. A technique is proposed for introducing Ti4+ impurity atoms into the sapphire crystal lattice by depositing titanium layers with a thickness of about 5 nm and their annealing in air (oxidizing atmosphere) to a temperature of 1400°C. It is shown that this preliminary treatment of the sapphire substrate surface results in epitaxial growth of (111) СdTe films parallel to the sapphire (0001) plane at a temperature of 350°C.
作者简介
A. Muslimov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
编辑信件的主要联系方式.
Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 119333
A. Butashin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 119333
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 119333
V. Babaev
Dagestan State University
Email: amuslimov@mail.ru
俄罗斯联邦, Makhachkala, 367000
N. Alikhanov
Dagestan State University
Email: amuslimov@mail.ru
俄罗斯联邦, Makhachkala, 367000
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