Epitaxy of CdTe on sapphire substrates with titanium buffer layers

Resumo

The formation of a developed electrical relief on the sapphire substrate surface is investigated. A technique is proposed for introducing Ti⁴⁺ impurity atoms into the sapphire crystal lattice by depositing titanium layers with a thickness of about 5 nm and their annealing in air (oxidizing atmosphere) to a temperature of 1400°C. It is shown that this preliminary treatment of the sapphire substrate surface results in epitaxial growth of (111) СdTe films parallel to the sapphire (0001) plane at a temperature of 350°C.