Single-Electron Transistor Based on a Linear Structure of Three Electrically and Optically Controlled Tunnel-Coupled Quantum Dots
- 作者: Tsukanov A.1
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隶属关系:
- Valiev Institute of Physics and Technology, Russian Academy of Sciences
- 期: 卷 48, 编号 5 (2019)
- 页面: 283-291
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187169
- DOI: https://doi.org/10.1134/S106373971905010X
- ID: 187169
如何引用文章
详细
A schematic diagram of a single-electron transistor with a sensitive element based on a resonant tunneling nanostructure consisting of three semiconductor quantum dots is discussed. The electron density in the steady (current) mode at the structure’s output is numerically calculated using a model of the incoherent electron transport between the extreme points and metallic reservoir contacts. The dependences of the electron density on time and system parameters are obtained. It is shown that there are sets of parameters that can provide high levels of sensitivity and reliability of the external electric field measurements. An alternative optically controlled transistor circuit is proposed, in which the electron transport through the structure is supported by a resonant laser field.
作者简介
A. Tsukanov
Valiev Institute of Physics and Technology, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: tsukanov@ftian.ru
俄罗斯联邦, Moscow, 117218