Etching of SiC in Low Power Inductively-Coupled Plasma
- 作者: Osipov A.1, Aleksandrov S.1, Solov’ev Y.1, Uvarov A.2, Osipov A.3
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隶属关系:
- Peter the Great St. Petersburg Polytechnical University
- CORIAL
- Institute of Mineralogy, Urals Branch, Russian Academy of Sciences
- 期: 卷 47, 编号 6 (2018)
- 页面: 427-433
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186932
- DOI: https://doi.org/10.1134/S1063739719010074
- ID: 186932
如何引用文章
详细
The peculiarities of etching 4H silicon carbide (4H-SiC) in F-containing inductively-coupled plasma at lowered values of power absorbed in an RF discharge are considered. The application of the initial SF6/O2 mixture yielded the most promising results in order to achieve a defect-free morphology of the etching surface of SiC. The influence of bias voltage applied to the substrate holder on the etching rate is identified. The maximum rate of etching in our experiments was 840 nm/min. It is shown that the additional treatment of SiC surface in Ar plasma positively affects the morphology of the etching surface, minimizing the surface density of various defects.
作者简介
A. Osipov
Peter the Great St. Petersburg Polytechnical University
编辑信件的主要联系方式.
Email: tema.osipov@mail.ru
俄罗斯联邦, St. Petersburg, 195251
S. Aleksandrov
Peter the Great St. Petersburg Polytechnical University
Email: tema.osipov@mail.ru
俄罗斯联邦, St. Petersburg, 195251
Yu. Solov’ev
Peter the Great St. Petersburg Polytechnical University
Email: tema.osipov@mail.ru
俄罗斯联邦, St. Petersburg, 195251
A. Uvarov
CORIAL
Email: tema.osipov@mail.ru
法国, Bernin, 38190
A. Osipov
Institute of Mineralogy, Urals Branch, Russian Academy of Sciences
Email: tema.osipov@mail.ru
俄罗斯联邦, Miass, 456317