Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells
- 作者: Yaremenko N.1, Strakhov V.1, Karachevtseva M.1, Fedorov Y.2
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
- Institute of Microwave Semiconductor Electronics
- 期: 卷 46, 编号 7 (2017)
- 页面: 449-453
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186609
- DOI: https://doi.org/10.1134/S1063739717070150
- ID: 186609
如何引用文章
详细
The effect of the excess hole capture efficiency on carrier accumulation with increasing photoexcitation in quantum wells of the n-AlGaAs/GaAs heterostructures is investigated. The oscillatory character of the dependence of the ratio between the intensities of photoluminescence from the quantum well and barrier layers on the well width is demonstrated. The hole capture times in the oscillation maximum and minimum are estimated as 3 and 370 ps. The shift of the energy transition in a resonant well under strong excitation is attributed to the charge buildup effect caused by the difference between the electron and hole capture rates.
作者简介
N. Yaremenko
Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
编辑信件的主要联系方式.
Email: tg275@ms.ire.rssi.ru
俄罗斯联邦, Moscow oblast, Fryazino
V. Strakhov
Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
Email: tg275@ms.ire.rssi.ru
俄罗斯联邦, Moscow oblast, Fryazino
M. Karachevtseva
Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
Email: tg275@ms.ire.rssi.ru
俄罗斯联邦, Moscow oblast, Fryazino
Yu. Fedorov
Institute of Microwave Semiconductor Electronics
Email: tg275@ms.ire.rssi.ru
俄罗斯联邦, Moscow