Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells
- Авторлар: Yaremenko N.1, Strakhov V.1, Karachevtseva M.1, Fedorov Y.2
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Мекемелер:
- Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
- Institute of Microwave Semiconductor Electronics
- Шығарылым: Том 46, № 7 (2017)
- Беттер: 449-453
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186609
- DOI: https://doi.org/10.1134/S1063739717070150
- ID: 186609
Дәйексөз келтіру
Аннотация
The effect of the excess hole capture efficiency on carrier accumulation with increasing photoexcitation in quantum wells of the n-AlGaAs/GaAs heterostructures is investigated. The oscillatory character of the dependence of the ratio between the intensities of photoluminescence from the quantum well and barrier layers on the well width is demonstrated. The hole capture times in the oscillation maximum and minimum are estimated as 3 and 370 ps. The shift of the energy transition in a resonant well under strong excitation is attributed to the charge buildup effect caused by the difference between the electron and hole capture rates.
Негізгі сөздер
Авторлар туралы
N. Yaremenko
Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
Хат алмасуға жауапты Автор.
Email: tg275@ms.ire.rssi.ru
Ресей, Moscow oblast, Fryazino
V. Strakhov
Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
Email: tg275@ms.ire.rssi.ru
Ресей, Moscow oblast, Fryazino
M. Karachevtseva
Kotel’nikov Institute of Radio Engineering and Electronics, Fryazino Branch
Email: tg275@ms.ire.rssi.ru
Ресей, Moscow oblast, Fryazino
Yu. Fedorov
Institute of Microwave Semiconductor Electronics
Email: tg275@ms.ire.rssi.ru
Ресей, Moscow