The detection limit of curved InGaAs/AlGaAs/GaAs hall bars


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The work is devoted to the study of noise characteristics of curved Hall bars based on InGaAs/AlGaAs/GaAs semiconductor heterostructures. The noise spectral density SN(f) was investigated experimentally and the magnetic field detection limit BN of a flat and similar Hall bar rolled in a tube was defined. The low-frequency spectra of 1/f noise were studied and the dimensionless Hooge noise parameter αH was determined. The ability to use the curved Hall bars in the devices for measuring weak magnetic fields (<1 μT) was predicted.

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A. Chesnitskiy

Rzhanov Institute of Semiconductor Physics

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Email: chesnitskiy@isp.nsc.ru
俄罗斯联邦, pr. Ak. Lavrent’eva 13, Novosibirsk, 630090

E. Mikhantiev

Rzhanov Institute of Semiconductor Physics

Email: chesnitskiy@isp.nsc.ru
俄罗斯联邦, pr. Ak. Lavrent’eva 13, Novosibirsk, 630090

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