Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles
- Авторы: Sogoyan A.1,2, Chumakov A.1,2
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Учреждения:
- National Research Nuclear University MEPhI
- AO Experimental Research and Production Association Specialized Electronic Systems
- Выпуск: Том 46, № 4 (2017)
- Страницы: 282-289
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186455
- DOI: https://doi.org/10.1134/S1063739717040084
- ID: 186455
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Аннотация
An analytical model to evaluate the ionization response of a group of closely located p-n junctions under exposure to a separate heavy charged particle (HCP) in a diffusive approximation is proposed. It is revealed that, taking into account, the inhomogeneous boundary conditions leads to larger values of the collected charge in a separate sensitive area than in estimations in a classical approximation in the case of homogeneous boundary conditions. It is shown that in modern submicron VLSIs it is possible to increase the collected charge through the amplification properties of a parasitic bipolar transistor.
Об авторах
A. Sogoyan
National Research Nuclear University MEPhI; AO Experimental Research and Production Association Specialized Electronic Systems
Автор, ответственный за переписку.
Email: Avsog@spels.ru
Россия, Moscow, 115409; Moscow, 115409
A. Chumakov
National Research Nuclear University MEPhI; AO Experimental Research and Production Association Specialized Electronic Systems
Email: Avsog@spels.ru
Россия, Moscow, 115409; Moscow, 115409