Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures
- Авторы: Egorkin V.1, Zemlyakov V.1, Nezhentsev A.1, Garmash V.1
-
Учреждения:
- National Research University of Electronic Technology (MIET)
- Выпуск: Том 46, № 4 (2017)
- Страницы: 272-276
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186438
- DOI: https://doi.org/10.1134/S1063739717040035
- ID: 186438
Цитировать
Аннотация
This paper investigates ohmic contacts to n-GaAs layers of the heterobipolar nanoheterostructures obtained through electron-beam evaporation of Ge, Au, Ni, and Au layer-by-layer. The effect of the firing time and temperature on the contact resistance is considered. Based on the analysis of the characteristics of the ohmic contacts, a firing installation of a special design and a firing technique are developed. The technique ensures the minimum contact resistance for the minimum size of a transition layer, satisfactory morphology, and even edges of the contacts.
Об авторах
V. Egorkin
National Research University of Electronic Technology (MIET)
Email: alekseyy_nejencev@rambler.ru
Россия, Zelenograd, 124498
V. Zemlyakov
National Research University of Electronic Technology (MIET)
Email: alekseyy_nejencev@rambler.ru
Россия, Zelenograd, 124498
A. Nezhentsev
National Research University of Electronic Technology (MIET)
Автор, ответственный за переписку.
Email: alekseyy_nejencev@rambler.ru
Россия, Zelenograd, 124498
V. Garmash
National Research University of Electronic Technology (MIET)
Email: alekseyy_nejencev@rambler.ru
Россия, Zelenograd, 124498