Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures
- Authors: Egorkin V.I.1, Zemlyakov V.E.1, Nezhentsev A.V.1, Garmash V.I.1
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Affiliations:
- National Research University of Electronic Technology (MIET)
- Issue: Vol 46, No 4 (2017)
- Pages: 272-276
- Section: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186438
- DOI: https://doi.org/10.1134/S1063739717040035
- ID: 186438
Cite item
Abstract
This paper investigates ohmic contacts to n-GaAs layers of the heterobipolar nanoheterostructures obtained through electron-beam evaporation of Ge, Au, Ni, and Au layer-by-layer. The effect of the firing time and temperature on the contact resistance is considered. Based on the analysis of the characteristics of the ohmic contacts, a firing installation of a special design and a firing technique are developed. The technique ensures the minimum contact resistance for the minimum size of a transition layer, satisfactory morphology, and even edges of the contacts.
About the authors
V. I. Egorkin
National Research University of Electronic Technology (MIET)
Email: alekseyy_nejencev@rambler.ru
Russian Federation, Zelenograd, 124498
V. E. Zemlyakov
National Research University of Electronic Technology (MIET)
Email: alekseyy_nejencev@rambler.ru
Russian Federation, Zelenograd, 124498
A. V. Nezhentsev
National Research University of Electronic Technology (MIET)
Author for correspondence.
Email: alekseyy_nejencev@rambler.ru
Russian Federation, Zelenograd, 124498
V. I. Garmash
National Research University of Electronic Technology (MIET)
Email: alekseyy_nejencev@rambler.ru
Russian Federation, Zelenograd, 124498