Integration of functional elements of resistive nonvolative memory with 1T-1R topology
- Авторы: Negrov D.1, Kirtaev R.1, Kiseleva I.1, Kondratyuk E.1, Shadrin A.1, Zenkevich A.1, Orlov O.2, Gornev E.2, Krasnikov G.2
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Учреждения:
- Moscow Institute of Physics and Technology
- ОАО Research Institute of Molecular Electronics
- Выпуск: Том 45, № 6 (2016)
- Страницы: 383-395
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185785
- DOI: https://doi.org/10.1134/S1063739716060056
- ID: 185785
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Аннотация
The issues related to the integration of functional elements of ReRAM memory based on resistive Pt/HfO2/TiN structures with transistors fabricated by CMOS technology (0.18 μm node) are discussed when placing the memory cells in metallization layers. It is shown that the formation of a ReRAM stack can be organized as the “back end of line” (BEOL) process. The possibility is demonstrated of writing information in fabricated 1T-1R cells at the given levels of current determined by the voltage on the transistor, which allows one to choose the required values of resistance for the ON and OFF states. The presence of a transistor makes it possible to limit the power that is scattered in a resistance-switchable structure, and makes its parameters virtually insensitive to changes in the voltage of writing. The latter circumstance makes it possible to use the same recording voltage for all devices, which makes the problem of reproducing the values for different cells in an array less acute.
Об авторах
D. Negrov
Moscow Institute of Physics and Technology
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
R. Kirtaev
Moscow Institute of Physics and Technology
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
I. Kiseleva
Moscow Institute of Physics and Technology
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
E. Kondratyuk
Moscow Institute of Physics and Technology
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
A. Shadrin
Moscow Institute of Physics and Technology
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
A. Zenkevich
Moscow Institute of Physics and Technology
Автор, ответственный за переписку.
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
O. Orlov
ОАО Research Institute of Molecular Electronics
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
E. Gornev
ОАО Research Institute of Molecular Electronics
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi
G. Krasnikov
ОАО Research Institute of Molecular Electronics
Email: zenkevich.av@mipt.ru
Россия, Moscow region, Dolgoprudnyi