Study of RF transistor with submicron T-shaped gate fabricated by nanoimprint lithography
- Autores: Egorkin V.1, Zaitsev A.1, Shmelev S.1
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Afiliações:
- National Research University MIET
- Edição: Volume 45, Nº 7 (2016)
- Páginas: 455-459
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185857
- DOI: https://doi.org/10.1134/S1063739716070052
- ID: 185857
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Resumo
The results devoted to the development of a method for creating an RF transistor, in which a T-shaped gate is formed by nanoimprint lithography, are presented. The characteristics of GaAs p-HEMT transistors have been studied. The developed transistor has a gate “foot” length of the order of 250 nm and a maximum transconductance of more than 350 mS/mm. The maximum frequency of current amplification ft is 40 GHz at the drain-source voltage VDS = 1.4 V and the maximum frequency of the power gain fmax is 50 GHz at VDS = 3 V.
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Sobre autores
V. Egorkin
National Research University MIET
Email: ziko27@yandex.ru
Rússia, Moscow, 124498
A. Zaitsev
National Research University MIET
Autor responsável pela correspondência
Email: ziko27@yandex.ru
Rússia, Moscow, 124498
S. Shmelev
National Research University MIET
Email: ziko27@yandex.ru
Rússia, Moscow, 124498