Study of RF transistor with submicron T-shaped gate fabricated by nanoimprint lithography
- Авторлар: Egorkin V.1, Zaitsev A.1, Shmelev S.1
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Мекемелер:
- National Research University MIET
- Шығарылым: Том 45, № 7 (2016)
- Беттер: 455-459
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185857
- DOI: https://doi.org/10.1134/S1063739716070052
- ID: 185857
Дәйексөз келтіру
Аннотация
The results devoted to the development of a method for creating an RF transistor, in which a T-shaped gate is formed by nanoimprint lithography, are presented. The characteristics of GaAs p-HEMT transistors have been studied. The developed transistor has a gate “foot” length of the order of 250 nm and a maximum transconductance of more than 350 mS/mm. The maximum frequency of current amplification ft is 40 GHz at the drain-source voltage VDS = 1.4 V and the maximum frequency of the power gain fmax is 50 GHz at VDS = 3 V.
Негізгі сөздер
Авторлар туралы
V. Egorkin
National Research University MIET
Email: ziko27@yandex.ru
Ресей, Moscow, 124498
A. Zaitsev
National Research University MIET
Хат алмасуға жауапты Автор.
Email: ziko27@yandex.ru
Ресей, Moscow, 124498
S. Shmelev
National Research University MIET
Email: ziko27@yandex.ru
Ресей, Moscow, 124498