The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them
- Авторлар: Enisherlova K.1, Goryachev V.1, Saraykin V.1, Kapilin S.1
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Мекемелер:
- AO NPP Pulsar
- Шығарылым: Том 46, № 8 (2017)
- Беттер: 591-599
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186745
- DOI: https://doi.org/10.1134/S1063739717080066
- ID: 186745
Дәйексөз келтіру
Аннотация
AlGaN/GaN heterostructures and AlGaN/GaN/SiC HEMT-transistors’ Schottky barriers (SBs) are studied by the capacitance–voltage (CV) method and the SIMS method in order to determine the causes of the capacitance instability in some cases. It is shown that in most cases, the appearance of a capacitance peak on the CV curves at frequencies of 20 to 500 kHz is associated with the presence of leakage currents in the barrier layer and at low frequencies of 1 to 20 kHz with the generation–recombination centers.
Авторлар туралы
K. Enisherlova
AO NPP Pulsar
Хат алмасуға жауапты Автор.
Email: Enisherlova@pulsarnpp.ru
Ресей, Moscow, 105187
V. Goryachev
AO NPP Pulsar
Email: Enisherlova@pulsarnpp.ru
Ресей, Moscow, 105187
V. Saraykin
AO NPP Pulsar
Email: Enisherlova@pulsarnpp.ru
Ресей, Moscow, 105187
S. Kapilin
AO NPP Pulsar
Email: Enisherlova@pulsarnpp.ru
Ресей, Moscow, 105187