Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure

Yu. V. Fedorov; D. L. Gnatyuk; A. V. Zuev; M. V. Maitama

doi:10.1134/S106373971706004X

Monolithic Integrated Circuits for Low-Noise Centimeter-Wave Amplifiers on an AlGaN/AlN/GaN/SiC Heterostructure

作者: Fedorov Y.V.¹, Gnatyuk D.L.¹, Zuev A.V.¹, Maitama M.V.¹
隶属关系:
1. Institute of Ultra-High Frequency Semiconductor Electronics (IUHFSE)
期: 卷 46, 编号 6 (2017)
页面: 404-407
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186571
DOI: https://doi.org/10.1134/S106373971706004X
ID: 186571

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详细

The results of designing low-noise broadband amplifiers on an AlGaN/AlN/GaN HEMT heterostructure are presented. In the investigations, two variants of low-noise amplifiers executed in a two-cascade circuit are considered and fabricated. The parameters of the fabricated monolithic integrated circuits of lownoise amplifiers are given.