Мақаланы E-mail арқылы жіберу Numerical simulation of resistive switching in heterostructures based on anisotropic oxide compounds
- Авторлар: Sirotkin V.V.1, Tulina N.A.2, Rossolenko A.N.2, Borisenko I.Y.1
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Мекемелер:
- Institute of Microelectronics Technology and High Purity Materials
- Institute of Solid State Physics
- Шығарылым: Том 80, № 5 (2016)
- Беттер: 497-499
- Бөлім: Proceedings of the International Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-17 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and the Properties of Oxides” ODPO-17
- URL: https://journals.rcsi.science/1062-8738/article/view/184344
- DOI: https://doi.org/10.3103/S1062873816050191
- ID: 184344
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Numerical simulation is used to study the effect anisotropic electrical conductivity and anisotropic oxygen diffusion have on the bipolar resistive switching effect in oxide compounds.
Авторлар туралы
V. Sirotkin
Institute of Microelectronics Technology and High Purity Materials
Хат алмасуға жауапты Автор.
Email: sirotkin@iptm.ru
Ресей, Chernogolovka, 142432
N. Tulina
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Ресей, Chernogolovka, 142432
A. Rossolenko
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Ресей, Chernogolovka, 142432
I. Borisenko
Institute of Microelectronics Technology and High Purity Materials
Email: sirotkin@iptm.ru
Ресей, Chernogolovka, 142432
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