Enviar artigo por via de e-mail Numerical simulation of resistive switching in heterostructures based on anisotropic oxide compounds
- Autores: Sirotkin V.V.1, Tulina N.A.2, Rossolenko A.N.2, Borisenko I.Y.1
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Afiliações:
- Institute of Microelectronics Technology and High Purity Materials
- Institute of Solid State Physics
- Edição: Volume 80, Nº 5 (2016)
- Páginas: 497-499
- Seção: Proceedings of the International Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-17 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and the Properties of Oxides” ODPO-17
- URL: https://journals.rcsi.science/1062-8738/article/view/184344
- DOI: https://doi.org/10.3103/S1062873816050191
- ID: 184344
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Resumo
Numerical simulation is used to study the effect anisotropic electrical conductivity and anisotropic oxygen diffusion have on the bipolar resistive switching effect in oxide compounds.
Sobre autores
V. Sirotkin
Institute of Microelectronics Technology and High Purity Materials
Autor responsável pela correspondência
Email: sirotkin@iptm.ru
Rússia, Chernogolovka, 142432
N. Tulina
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Rússia, Chernogolovka, 142432
A. Rossolenko
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Rússia, Chernogolovka, 142432
I. Borisenko
Institute of Microelectronics Technology and High Purity Materials
Email: sirotkin@iptm.ru
Rússia, Chernogolovka, 142432
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