Numerical simulation of resistive switching in heterostructures based on anisotropic oxide compounds
- Авторы: Sirotkin V.V.1, Tulina N.A.2, Rossolenko A.N.2, Borisenko I.Y.1
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Учреждения:
- Institute of Microelectronics Technology and High Purity Materials
- Institute of Solid State Physics
- Выпуск: Том 80, № 5 (2016)
- Страницы: 497-499
- Раздел: Proceedings of the International Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-17 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and the Properties of Oxides” ODPO-17
- URL: https://journals.rcsi.science/1062-8738/article/view/184344
- DOI: https://doi.org/10.3103/S1062873816050191
- ID: 184344
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Аннотация
Numerical simulation is used to study the effect anisotropic electrical conductivity and anisotropic oxygen diffusion have on the bipolar resistive switching effect in oxide compounds.
Об авторах
V. Sirotkin
Institute of Microelectronics Technology and High Purity Materials
Автор, ответственный за переписку.
Email: sirotkin@iptm.ru
Россия, Chernogolovka, 142432
N. Tulina
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Россия, Chernogolovka, 142432
A. Rossolenko
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Россия, Chernogolovka, 142432
I. Borisenko
Institute of Microelectronics Technology and High Purity Materials
Email: sirotkin@iptm.ru
Россия, Chernogolovka, 142432
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