电邮这篇文章 Numerical simulation of resistive switching in heterostructures based on anisotropic oxide compounds
- 作者: Sirotkin V.V.1, Tulina N.A.2, Rossolenko A.N.2, Borisenko I.Y.1
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隶属关系:
- Institute of Microelectronics Technology and High Purity Materials
- Institute of Solid State Physics
- 期: 卷 80, 编号 5 (2016)
- 页面: 497-499
- 栏目: Proceedings of the International Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-17 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and the Properties of Oxides” ODPO-17
- URL: https://journals.rcsi.science/1062-8738/article/view/184344
- DOI: https://doi.org/10.3103/S1062873816050191
- ID: 184344
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详细
Numerical simulation is used to study the effect anisotropic electrical conductivity and anisotropic oxygen diffusion have on the bipolar resistive switching effect in oxide compounds.
作者简介
V. Sirotkin
Institute of Microelectronics Technology and High Purity Materials
编辑信件的主要联系方式.
Email: sirotkin@iptm.ru
俄罗斯联邦, Chernogolovka, 142432
N. Tulina
Institute of Solid State Physics
Email: sirotkin@iptm.ru
俄罗斯联邦, Chernogolovka, 142432
A. Rossolenko
Institute of Solid State Physics
Email: sirotkin@iptm.ru
俄罗斯联邦, Chernogolovka, 142432
I. Borisenko
Institute of Microelectronics Technology and High Purity Materials
Email: sirotkin@iptm.ru
俄罗斯联邦, Chernogolovka, 142432
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