Email this article Numerical simulation of resistive switching in heterostructures based on anisotropic oxide compounds
- Authors: Sirotkin V.V.1, Tulina N.A.2, Rossolenko A.N.2, Borisenko I.Y.1
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Affiliations:
- Institute of Microelectronics Technology and High Purity Materials
- Institute of Solid State Physics
- Issue: Vol 80, No 5 (2016)
- Pages: 497-499
- Section: Proceedings of the International Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-17 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and the Properties of Oxides” ODPO-17
- URL: https://journals.rcsi.science/1062-8738/article/view/184344
- DOI: https://doi.org/10.3103/S1062873816050191
- ID: 184344
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Abstract
Numerical simulation is used to study the effect anisotropic electrical conductivity and anisotropic oxygen diffusion have on the bipolar resistive switching effect in oxide compounds.
About the authors
V. V. Sirotkin
Institute of Microelectronics Technology and High Purity Materials
Author for correspondence.
Email: sirotkin@iptm.ru
Russian Federation, Chernogolovka, 142432
N. A. Tulina
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Russian Federation, Chernogolovka, 142432
A. N. Rossolenko
Institute of Solid State Physics
Email: sirotkin@iptm.ru
Russian Federation, Chernogolovka, 142432
I. Yu. Borisenko
Institute of Microelectronics Technology and High Purity Materials
Email: sirotkin@iptm.ru
Russian Federation, Chernogolovka, 142432
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