Drop deposition of thin nanostructured coatings of lead telluride
- Авторлар: Phong T.D.1, Thuath N.T.1, Arakelian S.M.2, Osipov A.V.2, Skryabin I.O.2
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Мекемелер:
- Vietnam National University
- Vladimir State University
- Шығарылым: Том 81, № 12 (2017)
- Беттер: 1416-1419
- Бөлім: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185243
- DOI: https://doi.org/10.3103/S1062873817120061
- ID: 185243
Дәйексөз келтіру
Аннотация
The current-voltage relationships of deposited structures are measured for cluster structures consisting of nanoparticles of lead telluride. Variation in the value of the tunnel current is shown. Optimum conditions for the possible emergence of quantum-hopping conductivity due to carrier tunneling (the characteristic sizes of the nanoclusters and the distances between them) are determined.
Авторлар туралы
Tran Phong
Vietnam National University
Email: arak@vlsu.ru
Вьетнам, Hanoi, 144
Nguyen Thuath
Vietnam National University
Email: arak@vlsu.ru
Вьетнам, Hanoi, 144
S. Arakelian
Vladimir State University
Хат алмасуға жауапты Автор.
Email: arak@vlsu.ru
Ресей, Vladimir, 600000
A. Osipov
Vladimir State University
Email: arak@vlsu.ru
Ресей, Vladimir, 600000
I. Skryabin
Vladimir State University
Email: arak@vlsu.ru
Ресей, Vladimir, 600000
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