Drop deposition of thin nanostructured coatings of lead telluride
- Autores: Phong T.D.1, Thuath N.T.1, Arakelian S.M.2, Osipov A.V.2, Skryabin I.O.2
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Afiliações:
- Vietnam National University
- Vladimir State University
- Edição: Volume 81, Nº 12 (2017)
- Páginas: 1416-1419
- Seção: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185243
- DOI: https://doi.org/10.3103/S1062873817120061
- ID: 185243
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Resumo
The current-voltage relationships of deposited structures are measured for cluster structures consisting of nanoparticles of lead telluride. Variation in the value of the tunnel current is shown. Optimum conditions for the possible emergence of quantum-hopping conductivity due to carrier tunneling (the characteristic sizes of the nanoclusters and the distances between them) are determined.
Sobre autores
Tran Phong
Vietnam National University
Email: arak@vlsu.ru
Vietnã, Hanoi, 144
Nguyen Thuath
Vietnam National University
Email: arak@vlsu.ru
Vietnã, Hanoi, 144
S. Arakelian
Vladimir State University
Autor responsável pela correspondência
Email: arak@vlsu.ru
Rússia, Vladimir, 600000
A. Osipov
Vladimir State University
Email: arak@vlsu.ru
Rússia, Vladimir, 600000
I. Skryabin
Vladimir State University
Email: arak@vlsu.ru
Rússia, Vladimir, 600000
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