Drop deposition of thin nanostructured coatings of lead telluride
- Авторы: Phong T.D.1, Thuath N.T.1, Arakelian S.M.2, Osipov A.V.2, Skryabin I.O.2
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Учреждения:
- Vietnam National University
- Vladimir State University
- Выпуск: Том 81, № 12 (2017)
- Страницы: 1416-1419
- Раздел: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185243
- DOI: https://doi.org/10.3103/S1062873817120061
- ID: 185243
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Аннотация
The current-voltage relationships of deposited structures are measured for cluster structures consisting of nanoparticles of lead telluride. Variation in the value of the tunnel current is shown. Optimum conditions for the possible emergence of quantum-hopping conductivity due to carrier tunneling (the characteristic sizes of the nanoclusters and the distances between them) are determined.
Об авторах
Tran Phong
Vietnam National University
Email: arak@vlsu.ru
Вьетнам, Hanoi, 144
Nguyen Thuath
Vietnam National University
Email: arak@vlsu.ru
Вьетнам, Hanoi, 144
S. Arakelian
Vladimir State University
Автор, ответственный за переписку.
Email: arak@vlsu.ru
Россия, Vladimir, 600000
A. Osipov
Vladimir State University
Email: arak@vlsu.ru
Россия, Vladimir, 600000
I. Skryabin
Vladimir State University
Email: arak@vlsu.ru
Россия, Vladimir, 600000
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