Frequency control of the dielectric temperature coefficient of resistance in the process of relaxation polarization

A. S. Bogatin; S. A. Kovrigina; V. N. Bogatina; A. L. Bulanova; I. O. Nosachyov

doi:10.3103/S1062873817050082

Frequency control of the dielectric temperature coefficient of resistance in the process of relaxation polarization

Authors: Bogatin A.S.¹, Kovrigina S.A.¹, Bogatina V.N.¹, Bulanova A.L.¹, Nosachyov I.O.¹
Affiliations:
1. Faculty of Physics
Issue: Vol 81, No 5 (2017)
Pages: 587-589
Section: Proceedings of the “OMA-19”, “ODPO-19”
URL: https://journals.rcsi.science/1062-8738/article/view/185077
DOI: https://doi.org/10.3103/S1062873817050082
ID: 185077

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Abstract

It is shown that the dielectric temperature coefficient of resistance (TCR) can be changed in the process of relaxation polarization. The TCR frequency dependences are calculated using the Debye model of polarization. When the signal frequency is altered, both the value and the sign of the TCR change. The effect of the change in the value and sign of the TCR when the frequency is altered is discovered experimentally in doped semiconductor barium titanate.