Frequency control of the dielectric temperature coefficient of resistance in the process of relaxation polarization
- 作者: Bogatin A.S.1, Kovrigina S.A.1, Bogatina V.N.1, Bulanova A.L.1, Nosachyov I.O.1
-
隶属关系:
- Faculty of Physics
- 期: 卷 81, 编号 5 (2017)
- 页面: 587-589
- 栏目: Proceedings of the “OMA-19”, “ODPO-19”
- URL: https://journals.rcsi.science/1062-8738/article/view/185077
- DOI: https://doi.org/10.3103/S1062873817050082
- ID: 185077
如何引用文章
详细
It is shown that the dielectric temperature coefficient of resistance (TCR) can be changed in the process of relaxation polarization. The TCR frequency dependences are calculated using the Debye model of polarization. When the signal frequency is altered, both the value and the sign of the TCR change. The effect of the change in the value and sign of the TCR when the frequency is altered is discovered experimentally in doped semiconductor barium titanate.
作者简介
A. Bogatin
Faculty of Physics
编辑信件的主要联系方式.
Email: asbbogatin@sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090
S. Kovrigina
Faculty of Physics
Email: asbbogatin@sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090
V. Bogatina
Faculty of Physics
Email: asbbogatin@sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090
A. Bulanova
Faculty of Physics
Email: asbbogatin@sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090
I. Nosachyov
Faculty of Physics
Email: asbbogatin@sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090
补充文件
