Frequency control of the dielectric temperature coefficient of resistance in the process of relaxation polarization
- Авторлар: Bogatin A.S.1, Kovrigina S.A.1, Bogatina V.N.1, Bulanova A.L.1, Nosachyov I.O.1
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Мекемелер:
- Faculty of Physics
- Шығарылым: Том 81, № 5 (2017)
- Беттер: 587-589
- Бөлім: Proceedings of the “OMA-19”, “ODPO-19”
- URL: https://journals.rcsi.science/1062-8738/article/view/185077
- DOI: https://doi.org/10.3103/S1062873817050082
- ID: 185077
Дәйексөз келтіру
Аннотация
It is shown that the dielectric temperature coefficient of resistance (TCR) can be changed in the process of relaxation polarization. The TCR frequency dependences are calculated using the Debye model of polarization. When the signal frequency is altered, both the value and the sign of the TCR change. The effect of the change in the value and sign of the TCR when the frequency is altered is discovered experimentally in doped semiconductor barium titanate.
Авторлар туралы
A. Bogatin
Faculty of Physics
Хат алмасуға жауапты Автор.
Email: asbbogatin@sfedu.ru
Ресей, Rostov-on-Don, 344090
S. Kovrigina
Faculty of Physics
Email: asbbogatin@sfedu.ru
Ресей, Rostov-on-Don, 344090
V. Bogatina
Faculty of Physics
Email: asbbogatin@sfedu.ru
Ресей, Rostov-on-Don, 344090
A. Bulanova
Faculty of Physics
Email: asbbogatin@sfedu.ru
Ресей, Rostov-on-Don, 344090
I. Nosachyov
Faculty of Physics
Email: asbbogatin@sfedu.ru
Ресей, Rostov-on-Don, 344090
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