Frequency control of the dielectric temperature coefficient of resistance in the process of relaxation polarization
- Авторы: Bogatin A.S.1, Kovrigina S.A.1, Bogatina V.N.1, Bulanova A.L.1, Nosachyov I.O.1
-
Учреждения:
- Faculty of Physics
- Выпуск: Том 81, № 5 (2017)
- Страницы: 587-589
- Раздел: Proceedings of the “OMA-19”, “ODPO-19”
- URL: https://journals.rcsi.science/1062-8738/article/view/185077
- DOI: https://doi.org/10.3103/S1062873817050082
- ID: 185077
Цитировать
Аннотация
It is shown that the dielectric temperature coefficient of resistance (TCR) can be changed in the process of relaxation polarization. The TCR frequency dependences are calculated using the Debye model of polarization. When the signal frequency is altered, both the value and the sign of the TCR change. The effect of the change in the value and sign of the TCR when the frequency is altered is discovered experimentally in doped semiconductor barium titanate.
Об авторах
A. Bogatin
Faculty of Physics
Автор, ответственный за переписку.
Email: asbbogatin@sfedu.ru
Россия, Rostov-on-Don, 344090
S. Kovrigina
Faculty of Physics
Email: asbbogatin@sfedu.ru
Россия, Rostov-on-Don, 344090
V. Bogatina
Faculty of Physics
Email: asbbogatin@sfedu.ru
Россия, Rostov-on-Don, 344090
A. Bulanova
Faculty of Physics
Email: asbbogatin@sfedu.ru
Россия, Rostov-on-Don, 344090
I. Nosachyov
Faculty of Physics
Email: asbbogatin@sfedu.ru
Россия, Rostov-on-Don, 344090
Дополнительные файлы
