Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation

N. A. Tulina; A. N. Rossolenko; I. M. Shmytko; N. N. Kolesnikov; D. N. Borisenko; V. V. Sirotkin; I. Yu. Borisenko

doi:10.3103/S1062873816060381

Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation

Authors: Tulina N.A.¹, Rossolenko A.N.¹, Shmytko I.M.¹, Kolesnikov N.N.¹, Borisenko D.N.¹, Sirotkin V.V.², Borisenko I.Y.²
Affiliations:
1. Institute of Solid State Physics
2. Institute of Microelectronics Technology and High Purity Materials
Issue: Vol 80, No 6 (2016)
Pages: 672-674
Section: Proceedings of the Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-18 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and Properties of Oxides” ODPO-18
URL: https://journals.rcsi.science/1062-8738/article/view/184499
DOI: https://doi.org/10.3103/S1062873816060381
ID: 184499

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

The effect applied voltage frequency has on bipolar resistive switching in microcontact type heterostructures based on thin films and single crystals of bismuth selenide is studied both experimentally and via numerical simulation.

About the authors

N. A. Tulina

Institute of Solid State Physics

Author for correspondence.
Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, 142432