Frequency properties of heterostructures based on bismuth selenide upon bipolar resistive switching: Experiments and numerical simulation
- Авторы: Tulina N.A.1, Rossolenko A.N.1, Shmytko I.M.1, Kolesnikov N.N.1, Borisenko D.N.1, Sirotkin V.V.2, Borisenko I.Y.2
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Учреждения:
- Institute of Solid State Physics
- Institute of Microelectronics Technology and High Purity Materials
- Выпуск: Том 80, № 6 (2016)
- Страницы: 672-674
- Раздел: Proceedings of the Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-18 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and Properties of Oxides” ODPO-18
- URL: https://journals.rcsi.science/1062-8738/article/view/184499
- DOI: https://doi.org/10.3103/S1062873816060381
- ID: 184499
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Аннотация
The effect applied voltage frequency has on bipolar resistive switching in microcontact type heterostructures based on thin films and single crystals of bismuth selenide is studied both experimentally and via numerical simulation.
Об авторах
N. Tulina
Institute of Solid State Physics
Автор, ответственный за переписку.
Email: tulina@issp.ac.ru
Россия, Chernogolovka, 142432
A. Rossolenko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Россия, Chernogolovka, 142432
I. Shmytko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Россия, Chernogolovka, 142432
N. Kolesnikov
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Россия, Chernogolovka, 142432
D. Borisenko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Россия, Chernogolovka, 142432
V. Sirotkin
Institute of Microelectronics Technology and High Purity Materials
Email: tulina@issp.ac.ru
Россия, Chernogolovka, 142432
I. Borisenko
Institute of Microelectronics Technology and High Purity Materials
Email: tulina@issp.ac.ru
Россия, Chernogolovka, 142432
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